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澳门新葡萄新京威尼斯商城
BLP065N08GL
065N08GL, LV, 低压, sgt
产品简介
BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.
优势特点
- Fast switching
- Low On-Resistance
- Low Gate Charge
- Low Reverse Transfer Capacitances
- High Avalanche Ruggedness
- RoHS Product
应用电路
